advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 30v simple drive requirement r ds(on) 10m fast switching characteristic i d 13.3a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without n otice thermal data parameter total power dissipation 3 -55 to 175 operating junction temperature range -55 to 175 pulsed drain current 1 52 halogen-free product parameter drain-source voltage gate-source voltage drain current, v gs @ 10v 3 linear derating factor 0.02 storage temperature range drain current, v gs @ 10v 3 11.7 201501124 1 ap9408gm-hf rating 30 + 20 13.3 s s s g d d d d so-8 g d s ap9408 series are from advanced power innovated design and silicon process technology to achieve the lowest possib le on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 30 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =10a - - 10 m v gs =4.5v, i d =6a - - 12 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 2.5 v g fs forward transconductance v ds =10v, i d =12a - 12 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =10a - 13 21 nc q gs gate-source charge v ds =24v - 2.2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 7 - nc t d(on) turn-on delay time v ds =15v - 8 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 24 - ns t f fall time r d =15 - 9 - ns c iss input capacitance v gs =0v - 860 1380 pf c oss output capacitance v ds =25v - 210 - pf c rss reverse transfer capacitance f=1.0mhz - 150 - pf r g gate resistance f=1.0mhz - 2 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.3a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0 v , - 23 - ns q rr reverse recovery charge di/dt=100a/s - 17 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 /w when mounted on min. copper pad. 2 ap9408gm-hf
ap9408gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 6 8 10 12 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = 6 a t a =25 0 10 20 30 40 50 0 1 2 3 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 10 20 30 40 50 0 1 2 3 4 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 175 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0.4 0.9 1.4 1.9 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d = 10 a v g =10v 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized v gs(th) 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c
ap9408gm-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristic s fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 10 20 30 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 16 v v ds = 20 v v ds = 24 v i d = 10 a 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 10 20 30 40 50 0 1 2 3 4 5 v gs , gate-to-source voltage (v) i d , drain current (a) t j =175 o c t j =25 o c v ds =5v operation in this area limited by r ds(on)
marking information 5 ap9408gm-hf 9408gm ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
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